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S8330MG - Infrared Laser diode

Key Features

  • Lasing Mode Structure: multi mode.
  • Peak Wavelength : typ. 830 nm.
  • Optical Ouput Power: 30 mW.
  • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO VrLD VrPD TC Tstg Value 30 2 30 -10 … +40 -10 … +85 Unit mW V V °C °C Speci.

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Datasheet Details

Part number S8330MG
Manufacturer Roithner
File Size 359.35 KB
Description Infrared Laser diode
Datasheet download datasheet S8330MG Datasheet

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Part Number Description
S8305MG Infrared Laser diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S8330MG TECHNICAL DATA Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 830 nm • Optical Ouput Power: 30 mW • Package: 5.6 mm Electrical Connection Pin Configuration n-type PIN Function 1 LD Cathode 2 LD Anode, PD Cathode 3 PD Anode Bottom View Absolute Maximum Ratings (TC=25°C) Item CW Output Power LD Reverse Voltage PD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO VrLD VrPD TC Tstg Value 30 2 30 -10 … +40 -10 … +85 Unit mW V V °C °C Specifications (TC=25°C, PO=30mW) Item Symbol Min. Optical Specifications Center Wavelength FWHM Beam Divergence* λC 820 θ║ θ┴ - Electrical Specifications Threshold Current Operating Current Slope Efficiency Ith - Iop η 0.