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RU16P8M4 Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU16P8M4
Manufacturer Ruichips
File Size 292.86 KB
Description P-Channel Advanced Power MOSFET
Download RU16P8M4 Download (PDF)

General Description

G D D S D PIN1 S D D SDFN2020 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=-4.5V) ID② Continuous Drain Current@TA(VGS=-4.5V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA S P-Channel MOSFET Rating Unit TC=25°C -16 ±12 150 -55 to 150 -14 V °C °C A TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C -56 -14 -9 -8 -5.6 17.8 7.1 2.5 1.6 A A W Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2013 1 www.ruichips.com RU16P8M4 Symbol Parameter Rating Unit RθJC ③ RθJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 7 50 Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed TBD Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU16P8M4 Min.

Typ.

Overview

RU16P8M4 P-Channel Advanced Power MOSFET.

Key Features

  • -16V/-8A, RDS (ON) =40mΩ(Typ. )@VGS=-4.5V RDS (ON) =65mΩ(Typ. )@VGS=-2.5V.
  • Super High Dense Cell Design.
  • Fast Switching Speed.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).