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RU16P8M4 - P-Channel Advanced Power MOSFET

Description

G D D S D PIN1 S D D SDFN2020 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted

Features

  • -16V/-8A, RDS (ON) =40mΩ(Typ. )@VGS=-4.5V RDS (ON) =65mΩ(Typ. )@VGS=-2.5V.
  • Super High Dense Cell Design.
  • Fast Switching Speed.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RU16P8M4-Ruichips.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RU16P8M4
Manufacturer Ruichips
File Size 292.86 KB
Description P-Channel Advanced Power MOSFET
Datasheet download datasheet RU16P8M4 Datasheet
Additional preview pages of the RU16P8M4 datasheet.

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Full PDF Text Transcription

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RU16P8M4 P-Channel Advanced Power MOSFET Features • -16V/-8A, RDS (ON) =40mΩ(Typ.)@VGS=-4.5V RDS (ON) =65mΩ(Typ.)@VGS=-2.5V • Super High Dense Cell Design • Fast Switching Speed • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Swtich • Battery Charge • DC/DC Converters Pin Description G D D S D PIN1 S D D SDFN2020 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=-4.5V) ID② Continuous Drain Current@TA(VGS=-4.
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