RU1H40L Description
TO252 N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC -Junction to Case Drain-Source Avalanche...
RU1H40L Key Features
- 100V/40A, RDS (ON) =22mΩ(Typ.)@VGS=10V RDS (ON) =28mΩ(Typ.)@VGS=4.5V
- Super High Dense Cell Design
- Fast Switching and Fully Avalanche Rated
- Reliable and Rugged
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)