RU30100R - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La

Features

30V/110A, RDS (ON) =4 mΩ(Typ. )@VGS=10V RDS (ON) =5.5mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU30100R
Manufacturer	Ruichips
File Size	302.87 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30100R Datasheet
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RU30100R N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =4 mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.

Published: Jan 29, 2016 |