RU40120M - N-Channel Advanced Power MOSFET

Description

D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted

Features

40V/120A, RDS (ON) =2.7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
Fast Switching Speed.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

📥 Download Datasheet

Datasheet Details

Part number	RU40120M
Manufacturer	Ruichips
File Size	281.05 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU40120M Datasheet
Additional preview pages of the RU40120M datasheet.

📁 Similar Datasheet

RU4 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU4 - FAST RECOVERY RECTIFIER DIODES (Sunmate)
RU4 - FAST RECOVERY RECTIFIERS DIODE (EIC)
RU4 - Silicon And Fast Recovery Rectifiers (WEJ)
RU4A - Fast Recovery Diode (Sanken)
RU4A - FAST RECOVERY RECTIFIER DIODES (Sunmate)
RU4A - FAST RECOVERY RECTIFIERS DIODE (EIC)
RU4A - Silicon And Fast Recovery Rectifiers (WEJ)
RU4AM - HIGH EFFICIENCY RECTIFIER DIODES (Sunmate)
RU4B - Fast Recovery Diode (Sanken)

Other Datasheets by Ruichips

RU40120R - N-Channel Advanced Power MOSFET
RU40120S - N-Channel Advanced Power MOSFET
RU40130R - N-Channel Advanced Power MOSFET
RU40150R - N-Channel Advanced Power MOSFET
RU40150S - N-Channel Advanced Power MOSFET
RU40190Q2 - N-Channel Advanced Power MOSFET
RU40190R - N-Channel Advanced Power MOSFET
RU40190S - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

RU40120M N-Channel Advanced Power MOSFET Features • 40V/120A, RDS (ON) =2.7mΩ(Typ.

Published: Apr 4, 2016 |