RU40231Q2 Overview
TO-3P Ratings N-Channel MOSFET Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted.
RU40231Q2 Key Features
- 40V/230A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.5V
- Super High Dense Cell Design
- Ultra Low On-Resistance
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)