RU40231Q2 - N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU40231Q2
Manufacturer	Ruichips
File Size	293.48 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU40231Q2 Datasheet
Additional preview pages of the RU40231Q2 datasheet.

Product details

Description

TO-3P Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS A

Features

40V/230A, RDS (ON) =2.3mΩ(Typ. )@VGS=10V RDS (ON) =3.5mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 10, 2017 |