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RU6055L Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU6055L N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU6055L
Manufacturer Ruichips
File Size 353.23 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU6055L-Ruichips.pdf

General Description

TO-252 Applications • DC-DC Converters and Off-line UPS • High Speed Power Switching • High Frequency Circuits N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C 60 ① Unit mon Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 240 A A W W °C/W ② 60 45 97 48 PD RθJC ③ Maximum Power Dissipation Thermal Resistance-Junction to Case 1.55 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 121 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.

B– FEB., 2011 .ruichips.

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Key Features

  • 60V/60A, RDS (ON) =10mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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