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RU6055R - N-Channel Advanced Power MOSFET

General Description

TO-220 TO-220F TO-263 TO-247 Applications Switching Application Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C 60 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID Drain-Source Voltage Gate-S

Key Features

  • 60V/60A, RDS (ON) =9mΩ (Type) @ VGS=10V,IDS=30A.
  • Ultra Low On-Resistance.
  • Fast Switching.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free,RoHS compliant Pin.

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Datasheet Details

Part number RU6055R
Manufacturer Ruichips
File Size 577.31 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6055R Datasheet

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RU6055R N-Channel Advanced Power MOSFET MOSFET Features • 60V/60A, RDS (ON) =9mΩ (Type) @ VGS=10V,IDS=30A • Ultra Low On-Resistance • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant Pin Description TO-220 TO-220F TO-263 TO-247 Applications • Switching Application Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C 60 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS IDP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ 240 60 A A ② Maximum Po