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RU75230S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU75230S
Manufacturer Ruichips
File Size 307.77 KB
Description N-Channel Advanced Power MOSFET
Download RU75230S Download (PDF)

General Description

D G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 75 ±25 175 -55 to 175 230 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 920 230 163 333 167 0.45 62.5 A A W °C/W °C/W 676 mJ Ruichips Semiconductor Co., Ltd Rev.

A– DEC., 2013 1 www.ruichips.com RU75230S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU75230S Min.

Typ.

Overview

RU75230S N-Channel Advanced Power MOSFET.

Key Features

  • 75V/230A, RDS (ON) =2.6mΩ(Typ. )@VGS=10V.
  • Ultra Low On-Resistance.
  • Fast Switching Speed.
  • High Power And Current Handling Capability.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available.