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RU80190R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU80190R
Manufacturer Ruichips
File Size 485.44 KB
Description N-Channel Advanced Power MOSFET
Download RU80190R Download (PDF)

General Description

TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– NOV., 2010 Rating 80 ±25 175 -55 to 175 190 ① 720 ② 190 ② 140 250 125 0.6 Unit V °C °C A A A W °C/W 1300 mJ www.ruichips.com RU80190R Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU80190R Unit Min.

Typ.

Overview

RU80190R N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 80V/190A, RDS (ON) =3.1mΩ (Type) @ VGS=10V,IDS=80A.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available.

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