RU8080S Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU8080S n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU8080S
Manufacturer	Ruichips
File Size	276.23 KB
Description	N-Channel Advanced Power MOSFET
Download	RU8080S Download (PDF)

General Description

TO-263 Applications • DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– NOV., 2011 Rating 80 ±25 175 -55 to 175 ① 80 ② 320 ① 80 59 125 62.5 1.2 Unit V °C °C A A A W W °C/W 410 mJ www.ruichips.com RU8080S Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU8080S Unit Min.

Typ.

Overview

RU8080S N-Channel Advanced Power MOSFET MOSFET.

Key Features

80V/80A, RDS (ON) =9mΩ(tpy. )@VGS=10V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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