Datasheet4U Logo Datasheet4U.com

RU8205C6 - N-Channel Advanced Power MOSFET

Description

G2 D1/D2 G1 S2 D1/D2 S1 SOT23-6 D1 D2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on

Features

  • 20V/6A, RDS (ON) =18mΩ(Typ. )@VGS=4.5V RDS (ON) =23mΩ(Typ. )@VGS=2.5V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RU8205C6
Manufacturer Ruichips
File Size 369.98 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU8205C6 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Ruichips

Part Number Description
RU8205G N-Channel Advanced Power MOSFET
RU80100R N-Channel Advanced Power MOSFET
RU80100S N-Channel Advanced Power MOSFET
RU80190R N-Channel Advanced Power MOSFET
RU8048R N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU8205C6 N-Channel Advanced Power MOSFET Features • 20V/6A, RDS (ON) =18mΩ(Typ.)@VGS=4.5V RDS (ON) =23mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management Pin Description G2 D1/D2 G1 S2 D1/D2 S1 SOT23-6 D1 D2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=4.
Published: |