RU8205C6 Overview
C AUG., 2015 1 G1 G2 S1 S2 Dual N-Channel MOSFET.
RU8205C6 Key Features
- 20V/6A, RDS (ON) =18mΩ(Typ.)@VGS=4.5V RDS (ON) =23mΩ(Typ.)@VGS=2.5V
- Low RDS (ON)
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS pliant)