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RUH30100M - N-Channel Advanced Power MOSFET

Description

D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Lar

Features

  • 30V/95A, RDS (ON) =2.7mΩ(Typ. )@VGS=10V RDS (ON) =3.5mΩ(Typ. )@VGS=4.5V.
  • Ultra Low On-Resistance.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet preview – RUH30100M

Datasheet Details

Part number RUH30100M
Manufacturer Ruichips
File Size 386.12 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH30100M Datasheet
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Full PDF Text Transcription

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RUH30100M N-Channel Advanced Power MOSFET Features • 30V/95A, RDS (ON) =2.7mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.
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