Ruilon X8050S
NPN Silicon Transistor
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun Total Device Dissipation Junction and Storage Temperature Symbol VCEO VCBO VEBO IC PD T J , T stg Max 25 40 6 800 Unit V V V mAdc 300 mW -55 to +150 °C X8050 Series SOT23 COLLECTOR 3 1 BASE 2 EMITTER Specifications are subject to change without notice. Please refer to for current information. Revised: 2022-03-07 Page:1 X8050 SeriesELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base Breakdown voltage Collector-base cut-off current Collector-emitter cut-off current Emitter-base cut-off current DC current gain ** Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol Testconditons VCBO IC = 100 ìA , IE = 0 VCEO IC = 1mA , IB = 0 VEBO IE = 100 ìA , IC = 0 ICBO VCB = 35V , IE = 0 ICEO VCE = 20 V , IB = 0 IEBO VEB = - 4 V, IC = 0...