SLSNNWH834TS Datasheet | Samsung Semiconductor

Feature 1. Mini-Mold type ( 3.0 - 3.0 - t 0.9mm ), 2. Beam Angle ( △θ : 120 0 ) 3. Ga N/Al2O2 Chip & Long Time Reliability 2) Applications -. Mobile Camera Phone, Flashlight for Camera - Absolute Maximum Rating -. Operation Forward Current Per Chip 37.5 ㎃ -. Peak Pulsed Forward Current Per Chip 100 ㎃ (Duty 1/10 Pulse Width 10msec) -. Reverse Voltage 5V -. Operating Temperature Range ( Topr ) -35℃ ∼ 85℃ -. Storage Temperature Range ( Tstg ) -40℃ ∼100℃ - Characteristics Rank Forward Voltage Reverse Current Chromaticity Coordinate Rank A B C 0.277 0.300 0.324 0.264 0.287 0.320 x 0.287 0.320 0.355 0.300 0.324 0.350 0.235 0.277 0.311 0.267 0.310 0.360 y 0.310 0.360 0.390 0.277 0.311 0.343 S Symbol VF IR Min. 2.9 Typ. 3.6 Max. 4.0 100 Unit V ㎂ ( Ta : 25OC ) Conditions IF=150㎃, 75㎃/circuit VR = 5V Condition IF=150㎃, 30㎃/chip Luminous Intensity Rank S Symbol IV IV Min. 5 Typ. 7 12 Max. 8.5 14 Unit cd cd Conditions IF=150㎃, 75㎃/circuit IF=300㎃, 150㎃/circuit (2sec-On/2sec-OFF) - Tolerance : VF:±0.1, IV:±10%, x,y:±0.02 - Luminous intensity measuring equipment : CAS140 B SAMSUNG ELECTRO-MECHANICS SLSNNWH834TS-00(050721) 3/15 .. - Chromaticity Diagram 0.41 0.39 0.37 0.35 0.33 0.31 0.29 0.27 0.25 0.23 0.25 0.27 0.29 0.31 0.33 0.35 0.37 SAMSUNG ELECTRO-MECHANICS SLSNNWH834TS-00(050721) 4/15 .. - Typical Characteristics Graph Relative Luminous Intensity vs. Forward Current 1000 Relative Luminous Intensity(%) Forward Current IF(m A) 1000 Forward Current vs. Forward Voltage 1 1 10 100 1000 Forward Current(m A) 1 2.5 Forward Voltage...