SW19N10
SW19N10 is manufactured by SAMWIN.
SAMWIN
N-channel MOSFET
Features
- High ruggedness
- RDS(ON) (Max 0.1Ω)@VGS=10V
- Gate Charge (Typ 100nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
TO-220
TO-252
BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm
1 1 2 3
2 3 2
1. Gate 2. Drain 3. Source
General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics.
Order Codes
Item 1 2 Sales Type SW P 19N10 SW D 19N10 Marking...
