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SW1N60C - N-channel D-PAK/I-PAK/TO-92 MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-251 TO-252 TO-92.
  • High ruggedness.
  • RDS(ON) (Max 9 Ω)@VGS=10V.
  • Gate Charge (Typical 5.6nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 12 3 1 2 3 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW1N60C
Manufacturer SAMWIN
File Size 446.20 KB
Description N-channel D-PAK/I-PAK/TO-92 MOSFET
Datasheet download datasheet SW1N60C Datasheet
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SAMWIN SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET Features TO-251 TO-252 TO-92 ■ High ruggedness ■ RDS(ON) (Max 9 Ω)@VGS=10V ■ Gate Charge (Typical 5.6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. BVDSS : 600V ID : 1.0A RDS(ON) : 9.
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