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SW20N60 Datasheet N-channel Power MOSFET

Manufacturer: SAMWIN

Overview: SAMWIN SW20N60 N-channel Power MOSFET.

Datasheet Details

Part number SW20N60
Manufacturer SAMWIN
File Size 815.83 KB
Description N-channel Power MOSFET
Datasheet SW20N60_SAMWIN.pdf

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge.

Key Features

  • High ruggedness MOSFET.
  • RDS(ON) (Max 0.3Ω)@VGS=10V.
  • Gate Charge (Max 80 nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-3P BVDSS : 600V ID : 20A.
  • RDS(ON) : 0.3ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General.

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