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DKI06075 - N Channel Trench Power MOSFET

Key Features

  • V(BR)DSS --------------------------------- 60 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 48 A.
  • RDS(ON) ------------ 7.0 mΩ max. (VGS = 10 V, ID = 34 A).
  • Qg-------- 26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant Package TO-252 (4) D (1) (2) (3) GDS (3) (2) (1) SDG.

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Datasheet Details

Part number DKI06075
Manufacturer Sanken
File Size 684.08 KB
Description N Channel Trench Power MOSFET
Datasheet download datasheet DKI06075 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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60 V, 48 A, 5.3 mΩ Low RDS(ON) N ch Trench Power MOSFET DKI06075 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 48 A  RDS(ON) ------------ 7.0 mΩ max. (VGS = 10 V, ID = 34 A)  Qg-------- 26.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 39 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.