DKI06261 - N Channel Trench Power MOSFET

Sanken

Key Features

V(BR)DSS --------------------------------- 60 V (ID = 100 µA).
ID ---------------------------------------------------------- 25 A.
RDS(ON) -------- 21.9 mΩ max. (VGS = 10 V, ID = 12.5 A).
Qg------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A).
Low Total Gate Charge.
High Speed Switching.
Low On-Resistance.
Capable of 4.5 V Gate Drive.
100 % UIL Tested.
RoHS Compliant Package TO-252 (4) D (1) (2) (3) GDS (3) (2) (1) SDG.

DKI06261 n channel trench power mosfet by Sanken - Datasheet Preview

Datasheet Details

Part number	DKI06261
Manufacturer	Sanken
File Size	683.22 KB
Description	N Channel Trench Power MOSFET
Datasheet	DKI06261 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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60 V, 25 A, 16.7 mΩ Low RDS(ON) N ch Trench Power MOSFET DKI06261 Features  V(BR)DSS --------------------------------- 60 V (ID = 100 µA)  ID ---------------------------------------------------------- 25 A  RDS(ON) -------- 21.9 mΩ max. (VGS = 10 V, ID = 12.5 A)  Qg------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.