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DKI10526 - N Channel Trench Power MOSFET

Datasheet Summary

Features

  • V(BR)DSS --------------------------------100 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 19 A.
  • RDS(ON) ----------54.2 mΩ max. (VGS = 10 V, ID = 9.3 A).
  • Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant Package TO-252 (4) D (1) (2) (3) GDS (3) (2) (1) SDG.

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Datasheet Details

Part number DKI10526
Manufacturer Sanken
File Size 683.44 KB
Description N Channel Trench Power MOSFET
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100 V, 19 A, 34.4 mΩ Low RDS(ON) N ch Trench Power MOSFET DKI10526 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 19 A  RDS(ON) ----------54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)  Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
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