Datasheet Summary
100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET
Features
- V(BR)DSS --------------------------------100 V (ID = 100 µA)
- ID ---------------------------------------------------------- 66 A
- RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)
- Qg------45.2 nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A)
- Low Total Gate Charge
- High Speed Switching
- Low On-Resistance
- Capable of 4.5 V Gate Drive
- 100 % UIL Tested
- RoHS pliant
Package
TO-220
(4) D
(1) (2) (3) GDS
Applications
- DC-DC converters
- Synchronous Rectification
- Power Supplies
Equivalent circuit
D(2)(4)
G(1) S(3)
Not to...
