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FKI10126 - Power MOSFET

Key Features

  • V(BR)DSS --------------------------------100 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 41 A.
  • RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A).
  • Qg------ 45.2nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Package TO-220F.
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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100 V, 41 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI10126 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 41 A  RDS(ON) -------- 12.1 mΩ max. (VGS = 10 V, ID = 33.0 A)  Qg------ 45.2nC (VGS = 4.5 V, VDS = 50 V, ID = 33.0 A) Package TO-220F  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.