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GKI04048 - N Channel Trench Power MOSFET

Key Features

  • V(BR)DSS --------------------------------- 40 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 26 A.
  • RDS(ON) ----------5.4 mΩ max. (VGS = 10 V, ID = 35.4 A).
  • Qg------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant.

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Datasheet Details

Part number GKI04048
Manufacturer Sanken
File Size 586.25 KB
Description N Channel Trench Power MOSFET
Datasheet download datasheet GKI04048 Datasheet

Full PDF Text Transcription for GKI04048 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GKI04048. For precise diagrams, and layout, please refer to the original PDF.

40 V, 26 A, 4.2 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI04048 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------...

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------------------ 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) ----------5.4 mΩ max. (VGS = 10 V, ID = 35.4 A)  Qg------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.