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GKI04101 - N Channel Trench Power MOSFET

Features

  • V(BR)DSS --------------------------------- 40 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 26 A.
  • RDS(ON) -------- 11.6 mΩ max. (VGS = 10 V, ID = 18.8 A).
  • Qg------- 5.1 nC (VGS = 4.5 V, VDS = 20 V, ID = 23.6 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant.

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Datasheet preview – GKI04101

Datasheet Details

Part number GKI04101
Manufacturer Sanken
File Size 593.90 KB
Description N Channel Trench Power MOSFET
Datasheet download datasheet GKI04101 Datasheet
Additional preview pages of the GKI04101 datasheet.

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Full PDF Text Transcription

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40 V, 26 A, 9.3 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI04101 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) -------- 11.6 mΩ max. (VGS = 10 V, ID = 18.8 A)  Qg------- 5.1 nC (VGS = 4.5 V, VDS = 20 V, ID = 23.6 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
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