Datasheet4U Logo Datasheet4U.com

GKI10301 - N Channel Trench Power MOSFET

Features

  • V(BR)DSS --------------------------------100 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 26 A.
  • RDS(ON) -------- 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A).
  • Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – GKI10301

Datasheet Details

Part number GKI10301
Manufacturer Sanken
File Size 594.48 KB
Description N Channel Trench Power MOSFET
Datasheet download datasheet GKI10301 Datasheet
Additional preview pages of the GKI10301 datasheet.

📁 Similar Datasheet

Other Datasheets by SANKEN
  • GKI10194 - N Channel Trench Power MOSFET
  • GKI10526 - N Channel Trench Power MOSFET
  • GKI03026 - N Channel Trench Power MOSFET
  • GKI03039 - N Channel Trench Power MOSFET
  • GKI03061 - N Channel Trench Power MOSFET
  • GKI03080 - N Channel Trench Power MOSFET
  • GKI04031 - N Channel Trench Power MOSFET
  • GKI04048 - N Channel Trench Power MOSFET

Full PDF Text Transcription

Click to expand full text
100 V, 26 A, 20.2 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI10301 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 26 A  RDS(ON) -------- 29.8 mΩ max. (VGS = 10 V, ID = 14.2 A)  Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
Published: |