GKI10526 Description
100 V, 20 A, 34.4 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI10526.
GKI10526 Key Features
- V(BR)DSS --------------------------------100 V (ID = 100 µA)
- ID ---------------------------------------------------------- 20 A
- RDS(ON) ----------54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)
- Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A)
- Low Total Gate Charge
- High Speed Switching
- Low On-Resistance
- Capable of 4.5 V Gate Drive
- 100 % UIL Tested
- RoHS pliant