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GKI10526 - N Channel Trench Power MOSFET

Features

  • V(BR)DSS --------------------------------100 V (ID = 100 µA).
  • ID ---------------------------------------------------------- 20 A.
  • RDS(ON) ----------54.2 mΩ max. (VGS = 10 V, ID = 9.3 A).
  • Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A).
  • Low Total Gate Charge.
  • High Speed Switching.
  • Low On-Resistance.
  • Capable of 4.5 V Gate Drive.
  • 100 % UIL Tested.
  • RoHS Compliant.

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Datasheet preview – GKI10526

Datasheet Details

Part number GKI10526
Manufacturer Sanken
File Size 594.73 KB
Description N Channel Trench Power MOSFET
Datasheet download datasheet GKI10526 Datasheet
Additional preview pages of the GKI10526 datasheet.

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Full PDF Text Transcription

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100 V, 20 A, 34.4 mΩ Low RDS(ON) N ch Trench Power MOSFET GKI10526 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 20 A  RDS(ON) ----------54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)  Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A)  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.
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