Click to expand full text
N-Channel MOS FET
SKP202
■Features
●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed
March. 2007
■Package---TO-263
■Applications
●PDP driving ●High speed switching
■Equivalent circuit
D (2)
G (1)
S (3)
■Absolute maximum ratings
(Ta=25°C） Parameter Sy
Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Channel Temperature Storage Temperature
mbol VDSS 20 VGSS ±3 ID ± ID(pulse) *1 ±1 PD 95 EAS *2 20 IAS Tch 15 Tstg
Rating 0 0 45A 80A (Tc=25°C) 0 45 0 －55 to 150
Unit V V A A W mJ A °C °C
*1 PW≤100μs，duty cycle≤１% *2 V DD=20V, L=180μH，ILp=45A, unclamped, RG=50Ω, See Fig.1
Sanken Electric Co., Ltd.
http://www.sanken-ele.co.
SKP202 Datasheet
