Full PDF Text Transcription for SKP253 (Reference)
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MOS FET SKP253 ■Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed December 2005 ■Package---TO-263 ■Applications • PDP driving ...
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uaranteed December 2005 ■Package---TO-263 ■Applications • PDP driving • High speed switching ■Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25°C) Characteristic Sym Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Channel Temperature Storage Temperature bol VDSS 25 VGSS ±3 ID ± ID(pulse) 1) ± PD 40 EAS 2) 16 IAS 20 Tch 15 Tstg Rating 0 0 20A 80A (Tc=25°C) 0 Unit V V A A W mJ A 0 - 55 to 150 °C °C 1) PW≤100μs, duty cycle≤1% 2 ) V DD=20V, L=740μH, ILp=20A, unclamped, RG=50Ω. See Fig.1 . Sa