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MOS FET
SKP253
■Features
• Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed
December 2005
■Package---TO-263
■Applications
• PDP driving • High speed switching
■Equivalent circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
(Ta=25°C)
Characteristic Sym Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Channel Temperature Storage Temperature
bol VDSS 25 VGSS ±3 ID ± ID(pulse) 1) ± PD 40 EAS 2) 16 IAS 20 Tch 15 Tstg
Rating 0 0 20A 80A (Tc=25°C) 0
Unit V V A A W mJ A
0 - 55 to 150
°C °C
1) PW≤100μs, duty cycle≤1% 2 ) V DD=20V, L=740μH, ILp=20A, unclamped, RG=50Ω. See Fig.1
.
Sanken Electric Co.,Ltd.
http://www.sanken-ele.co.
SKP253 Datasheet
