Datasheet4U Logo Datasheet4U.com

SY2305 - P-Channel logic enhancement mode power field effect transistors

General Description

The SY2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V ‹ -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V ‹ -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V ‹ Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC ‹ current capability SOT-23-3L package design ‹ ‹ PIN.

📥 Download Datasheet

Datasheet Details

Part number SY2305
Manufacturer SANY
File Size 1.40 MB
Description P-Channel logic enhancement mode power field effect transistors
Datasheet download datasheet SY2305 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SY2332 High Brightness Chip LED Lamp AUK
SY2333 Chip LED AUK
SY2336-E High Brightness Chip LED AUK
SY23425 Secondary Side Synchronous Rectification Controller Silergy
SY20 10 WATT VOLTAGE REGULATOR Semtech Corporation

Other Datasheets by SANY

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SY2305 DESCRIPTION The SY2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V ‹ -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V ‹ -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.