SY2305 - P-Channel logic enhancement mode power field effect transistors

Datasheet Summary

Description

The SY2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

-15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design PIN.

SANY

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Datasheet Details

Part number	SY2305
Manufacturer	SANY
File Size	1.40 MB
Description	P-Channel logic enhancement mode power field effect transistors
Datasheet	SY2305 Datasheet
Additional preview pages of the SY2305 datasheet.

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SY2305 DESCRIPTION The SY2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.

Published: Feb 4, 2014 |