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SY2305 Datasheet P-channel Logic Enhancement Mode Power Field Effect Transistors

Manufacturer: SANY

Overview: SY2305.

Datasheet Details

Part number SY2305
Manufacturer SANY
File Size 1.40 MB
Description P-Channel logic enhancement mode power field effect transistors
Datasheet SY2305_SANY.pdf

General Description

The SY2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V ‹ -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V ‹ -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V ‹ Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC ‹ current capability SOT-23-3L package design ‹ ‹ PIN.

SY2305 Distributor