SCILICON SFB190N85
N-MOSFET
| Part No. | SFB190N85 |
|---|---|
| Datasheet | SFB190N85 Download |
| Manufacturer | SCILICON |
| Description | N-MOSFET |
| Buy | Stock & Price |
FEATURES
● Uses advanced SGT MOSFET technology● Extremely low on-resistance RDS(on)
● High Ruggedness
● 100% Avalance Tested Application
● Motor Drives
● UPS (Uninterruptible Power Supplies)
● DC/DC converter
● General purpose applications Product Summary VDS RDS(on)@VGS=10V ID 85V 3.0 mΩ 190A Part ID SFP190N85 SFB190N85 Package Type TO-220 TO-263 Marking 190N85 190N85
MAXIMUM RATINGS
Parameter Drain-source voltage Continuous drain current TC = 25°C (Package limit) TC = 100°C (Package limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=0.033mH,VDS=80V) Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Symbol VDS ID ID pulse EAS VGS Ptot Tj , Tstg Value 85 190 150 570 600 ±20 230 -55...+150 Unit V A mJ V W ℃ Thermal Resistance Parameter Thermal resistance, junction – case. Max Thermal resistance, junction –
