SFP120N100
SFP120N100 is N-MOSFET manufactured by SCILICON.
Features
- Uses advanced SGT MOSFET technology
- Extremely low on-resistance RDS(on)
- High Ruggedness
- 100% Avalance Tested
Application
- Motor Drives
- UPS (Uninterruptible Power Supplies)
- DC/DC converter
- General purpose applications
Product Summary
VDS RDS(on)@VGS=10V ID
100V 4.0 mΩ 120A
Part ID
Package Type
TO-220
SFB120N100
TO-263
Marking 120N100 120N100
Maximum Ratings
Parameter
Drain-source voltage Continuous drain current TC = 25°C (Package limit) TC = 100°C (Package limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=0.033m H,VDS=80V) Gate-emitter voltage Power dissipation TC = 25°C
Operating junction and storage temperature
Symbol VDS
ID pulse EAS VGS Ptot
Tj , Tstg
Value 100
120 90 480 600 ±20 227
-55...+150
Unit V
A m J V W ℃
Thermal Resistance
Parameter Thermal resistance, junction
- case. Max Thermal resistance,...
