SFP120N100 - N-MOSFET

Key Features

Uses advanced SGT MOSFET technology.
Extremely low on-resistance RDS(on).
High Ruggedness.
100% Avalance Tested.

SFP120N100 n-mosfet by SCILICON - Datasheet Preview

Datasheet Details

Part number	SFP120N100
Manufacturer	SCILICON
File Size	1.54 MB
Description	N-MOSFET
Datasheet	SFP120N100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SFPS(BFP)1(B2)01N2100N0100B SGT N-MOSFET100V, 120A, 4.0mΩ Features  Uses advanced SGT MOSFET technology  Extremely low on-resistance RDS(on)  High Ruggedness  100% Avalance Tested Application  Motor Drives  UPS (Uninterruptible Power Supplies)  DC/DC converter  General purpose applications Product Summary VDS RDS(on)@VGS=10V ID 100V 4.0 mΩ 120A Part ID Package Type SFP120N100 TO-220 SFB120N100 TO-263 Marking 120N100 120N100 Maximum Ratings Parameter Drain-source voltage Continuous drain current TC = 25°C (Package limit) TC = 100°C (Package limit) Pulsed drain current TC = 25°C, tp limited by Tjmax Avalanche energy, single pulse (L=0.