S10N65C Datasheet 650V N-Channel MOSFET

Manufacturer: SEAWON

S10N65C 650v n-channel mosfet by SEAWON - Datasheet Preview

Datasheet Details

Part number	S10N65C
Manufacturer	SEAWON
File Size	1.71 MB
Description	650V N-Channel MOSFET
Download	S10N65C Download (PDF)

General Description

The 10N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

Overview

650V N-Channel MOSFET.

Key Features

9.5A, 650V, RDS(on) = 0.75Ω @VGS = 10 V.
Low gate charge ( typical 36 nC).
Low Crss ( typical 5.8pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability S10N65C 1 TO-220 1 TO-220F 2.Drain 1.Gate 3.Source Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gat.

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