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S10N65C - 650V N-Channel MOSFET

Description

have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

  • 9.5A, 650V, RDS(on) = 0.75Ω @VGS = 10 V.
  • Low gate charge ( typical 36 nC).
  • Low Crss ( typical 5.8pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability S10N65C 1 TO-220 1 TO-220F 2.Drain 1.Gate 3.Source Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gat.

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Datasheet preview – S10N65C

Datasheet Details

Part number S10N65C
Manufacturer SEAWON
File Size 1.71 MB
Description 650V N-Channel MOSFET
Datasheet download datasheet S10N65C Datasheet
Additional preview pages of the S10N65C datasheet.

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    Full PDF Text Transcription

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    650V N-Channel MOSFET Description The 10N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • 9.5A, 650V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 36 nC) • Low Crss ( typical 5.8pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability S10N65C 1 TO-220 1 TO-220F 2.Drain 1.Gate 3.
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