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SS2609 - Hall Latch - High Sensitivity

General Description

The SS2609 Hall effect sensor IC is fabricated from mixed signal CMOS technology.

It incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.

Key Features

  • CMOS Hall IC Technology.
  • Bipolar Output CMOS Multi-purpose latch.
  • Solid-State Reliability much better than reed switch.
  • Operation down to 2.5V.
  • Supply current down to 45μA, very low power consumption.
  • CMOS inverter output (no pull-up resistance).
  • High sensitivity for direct reed switch re- placement.

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Datasheet Details

Part number SS2609
Manufacturer SEC
File Size 326.31 KB
Description Hall Latch - High Sensitivity
Datasheet download datasheet SS2609 Datasheet

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SS2609 Hall Latch - High Sensitivity Features and Benefits – CMOS Hall IC Technology – Bipolar Output CMOS Multi-purpose latch – Solid-State Reliability much better than reed switch – Operation down to 2.5V – Supply current down to 45μA, very low power consumption – CMOS inverter output (no pull-up resistance) – High sensitivity for direct reed switch re- placement application Application Examples – Solid state switch – Magneto-electric conversion switch – Magnet proximity sensor for reed switch re- placement in low duty cycle applications 3 pin TSOT23 (suffix STT) 3 pin SIP (suffix UA) Functional Block Diagram 1 V3.10 Nov 1, 2013 SS2609 Hall Latch - High Sensitivity General Description The SS2609 Hall effect sensor IC is fabricated from mixed signal CMOS technology.