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HP50N06 - 60V N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.023 Ω (Typ. ) @VGS=10V ‰ 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HP50N06
Manufacturer SEMIHOW
File Size 944.83 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet HP50N06 Datasheet
Additional preview pages of the HP50N06 datasheet.

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    Full PDF Text Transcription

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    HP50N06 July 2005 HP50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 23 mΩ ID = 50 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.023 Ω (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3.
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