TIP122
TIP120/121/122
TIP120/121/122
◎ SEMIHOW REV.A0,Oct 2007
TIP120/121/122
TIP120/121/122
Monolithic Construction With Built In
Base-Emitter Shunt Resistors
- High DC Current Gain : h FE=1000 @ VCE= 4V, IC= 3A (Min.)
- Collector-Emitter Sustaining Voltage
- Low Collector-Emitter Saturation Voltage
- Industrial Use
- plementary to TIP125/126/127
Absolute Maximum Ratings Ta=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL RATING UNIT
Collector-Base Voltage : TIP120 : TIP121 : TIP122
VCBO
60 V 80 V 100 V
Collector-Emitter Voltage : TIP120 : TIP121 : TIP122
VCEO
60 V 80 V 100 V
Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature
VEBO IC ICP IB PC PC TJ
TSTG
5 5 8 120 2 65 150 -65~150
A ㎃ W
W ℃ ℃
PNP Epitaxial Silicon Darlington Transistor
Equivalent Circuit
TO-220 1. Base 2. Collector 3. Emitter
12 3
Electrical Characteristics...
