SEMIPOWER SW100N10
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.FEATURES
TO-220● High ruggedness
● RDS(ON) (Max 11mΩ)@VGS=10V
● Gate Charge (Typical 109nC)
● Improved dv/dt Capability
● 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 100V ID : 100A RDS(ON) :11mΩ 2 1 3 Order Codes Item 1 Sales Type SW P 100N10 Marking SW100N10 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche E