SEMIPOWER SW12N65B
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW12N65B |
|---|---|
| Datasheet | SW12N65B Download |
| Manufacturer |  SEMIPOWER |
| Description | N-channel TO-220F MOSFET |
| Buy | Stock & Price |
FEATURES
● High ruggedness● RDS(ON) (Max 0.85 Ω)@VGS=10V
● Gate Charge (Typical 28nC)
● Improved dv/dt Capability
● 100% Avalanche Tested BVDSS : 650V ID : 12.0A RDS(ON) : 0.85ohm 1 2 3 1 2 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. 3 Order Codes Item 1 Sales Type SW F 12N65B Marking SW12N65 Package TO-220F Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC Continuous Drain Current (@TC Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC=25oC) Derating Factor above 25oC (note 2) (note 1) (note 3) =25oC) =100oC) (note 1) Parameter Value 650 12.0* 7.6* 48 ±30 790 104 4.5 54 0.43 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *.
