SW1N70A - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

High ruggedness.
RDS(ON) (Max 15 Ω)@VGS=10V.
Gate Charge (Max 5nC).
Improved dv/dt Capability.
100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General.

SEMIPOWER

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Datasheet Details

Part number	SW1N70A
Manufacturer	SEMIPOWER
File Size	671.47 KB
Description	MOSFET
Datasheet	SW1N70A Datasheet
Additional preview pages of the SW1N70A datasheet.

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Full PDF Text Transcription

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SAMWIN SW1N70A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. BVDSS : 700V ID : 0.

Published: Apr 20, 2017 |