Datasheet Summary
SAMWIN
N-channel TO-3P MOSFET
Features
- High ruggedness
- RDS(ON) (Max 0.27Ω)@VGS=10V
- Gate Charge (Typ 103 nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
TO-3P
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 500V ID : 20A RDS(ON) : 0.27Ω
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