SEMIPOWER SW20N50U
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW20N50U |
|---|---|
| Datasheet | SW20N50U Download |
| Manufacturer |  SEMIPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● High ruggedness● RDS(ON) (Max 0.27Ω)@VGS=10V
● Gate Charge (Typ 103 nC)
● Improved dv/dt Capability
● 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 500V ID : 20A RDS(ON) : 0.27Ω 2 1 3 Order Codes Item 1 Sales Type SWW 20N50 Marking SW20N50U Package TO-3P Packaging TUBE Absolute maximum ratings Symbol Parameter VDSS Drain to Source Voltage ID Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) IDM Drain current pulsed VGS Gate to Source Voltage
