SW2N10 Datasheet | SEMIPOWER

SAMWIN N-channel SOT-23 MOSFET Features - High ruggedness - RDS(ON) (Max0.24Ω)@VGS=10V - Gate Charge (Typical 13n C) - Improved dv/dt Capability - 100% Avalanche Tested SOT-23 3 2 1 1. Gate 2. Source 3. Drain General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 100V ID : 2A RDS(ON) :0.24Ω Order Codes Item Sales Type 1 SW E...