SEMIPOWER SW2N10
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW2N10 |
|---|---|
| Datasheet | SW2N10 Download |
| Manufacturer |  SEMIPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● High ruggedness● RDS(ON) (Max0.24Ω)@VGS=10V
● Gate Charge (Typical 13nC)
● Improved dv/dt Capability
● 100% Avalanche Tested SOT-23 3 2 1 1. Gate 2. Source 3. Drain
GENERAL DESCRIPTION
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 100V ID : 2A RDS(ON) :0.24Ω 2 1 3 Order Codes Item Sales Type 1 SW E 2N10 Absolute maximum ratings Marking SW2N10 Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak
