SEMIPOWER SW2N70
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.FEATURES
● High ruggedness● RDS(ON) (Max 7 Ω)@VGS=10V
● Gate Charge (Max 5nC)
● Improved dv/dt Capability
● 100% Avalanche Tested TO-251 TO-252 12 3 2 1 3 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
This power MOSFET is usually used at AC adaptors and SMPS. N-channel MOSFET BVDSS : 700V ID : 2A RDS(ON) : 7ohm 2 1 3 Order Codes Item Sales Type 1 SW I 2N70 2 SW D 2N70 Absolute maximum ratings Marking SW2N70 SW2N70 Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv