SW5N80 - MOSFET

SEMIPOWER

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

TO-220F.
High ruggedness.
RDS(ON) (Max 1.8 Ω)@VGS=10V.
Gate Charge (Typ 26nC).
Improved dv/dt Capability.
100% Avalanche Tested 1 2 3 1. Gate 2. Drain 3. Source General.

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SW5N80 mosfet by SEMIPOWER - Datasheet Preview

Datasheet Details

Part number	SW5N80
Manufacturer	SEMIPOWER
File Size	764.52 KB
Description	MOSFET
Datasheet	SW5N80 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW5N80 N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 800V ID : 5.0A RDS(ON) : 1.