SW5N80 Datasheet | SEMIPOWER

SAMWIN N-channel MOSFET Features TO-220F - High ruggedness - RDS(ON) (Max 1.8 Ω)@VGS=10V - Gate Charge (Typ 26n C) - Improved dv/dt Capability - 100% Avalanche Tested 1 2 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 800V ID : 5.0A RDS(ON) : 1.8ohm Order Codes Item 1 Sales Type SW F 5N80 Marking SW5N80 Package TO-220F Packaging...