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SW630A - MOSFET

General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  • High ruggedness.
  • RDS(ON) (Max 0.4 Ω)@VGS=10V.
  • Gate Charge (Typ 22nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-220 TO-252 12 3 1 2 3 BVDSS : 200V ID : 10A RDS(ON) : 0.4ohm 2 1. Gate 2. Drain 3. Source General.

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Datasheet Details

Part number SW630A
Manufacturer SEMIPOWER
File Size 425.18 KB
Description MOSFET
Datasheet download datasheet SW630A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SAMWIN SW630A N-channel TO-220/D-PAK MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.4 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-252 12 3 1 2 3 BVDSS : 200V ID : 10A RDS(ON) : 0.4ohm 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor.