SW630A
Overview
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
- High ruggedness
- RDS(ON) (Max 0.4 Ω)@VGS=10V
- Gate Charge (Typ 22nC)
- Improved dv/dt Capability
- 100% Avalanche Tested TO-220 TO-252 12 3 1 2 3 BVDSS : 200V ID : 10A RDS(ON) : 0.4ohm 2
- Drain
- Source
