SW740U Datasheet | SEMIPOWER

SAMWIN N-channel TO-220 MOSFET Features - High ruggedness - RDS(ON) (Max 0.55Ω)@VGS=10V - Gate Charge (Typical 38nC) - Improved dv/dt Capability - 100% Avalanche Tested TO-220 BVDSS : 400V ID : 10A RDS(ON) : 0.55ohm 2 3 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power...