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SW80N08B - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • TO-220.
  • High ruggedness.
  • RDS(ON) (Max8.5mΩ)@VGS=10V.
  • Gate Charge (Typical 72nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet preview – SW80N08B

Datasheet Details

Part number SW80N08B
Manufacturer SEMIPOWER
File Size 658.95 KB
Description MOSFET
Datasheet download datasheet SW80N08B Datasheet
Additional preview pages of the SW80N08B datasheet.

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Full PDF Text Transcription

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SAMWIN SW80N08B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max8.5mΩ)@VGS=10V ■ Gate Charge (Typical 72nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 80V ID : 80A RDS(ON) :8.
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