SEMIPOWER SW80N08B
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.| Part No. | SW80N08B |
|---|---|
| Datasheet | SW80N08B Download |
| Manufacturer |  SEMIPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
TO-220● High ruggedness
● RDS(ON) (Max8.5mΩ)@VGS=10V
● Gate Charge (Typical 72nC)
● Improved dv/dt Capability
● 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source
GENERAL DESCRIPTION
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 80V ID : 80A RDS(ON) :8.5mΩ 2 1 3 Order Codes Item Sales Type 1 SW P 80N08 Marking SW80N08B Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Single pulsed Avalanche Energy (
