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SW9N90 - MOSFET

Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • High ruggedness.
  • RDS(ON) (Max 1.45 Ω)@VGS=10V.
  • Gate Charge (Typ 60nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General.

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Datasheet preview – SW9N90

Datasheet Details

Part number SW9N90
Manufacturer SEMIPOWER
File Size 0.95 MB
Description MOSFET
Datasheet download datasheet SW9N90 Datasheet
Additional preview pages of the SW9N90 datasheet.

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    Full PDF Text Transcription

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    SAMWIN SW9N90 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.45 Ω)@VGS=10V ■ Gate Charge (Typ 60nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. BVDSS : 900V ID : 9.0A RDS(ON) : 1.
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