SFS9926 Datasheet | SEMIWELL

Features - Low RDS(on) (0.030Ω )@VGS=4.5V Low RDS(on) (0.043Ω )@VGS=2.5V Gate Charge (Typical 14n C) Improved dv/dt Capability Maximum Junction Temperature Range (150°C) Available in Tape and Reel Symbol D2 D2 D1 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 - - - - .. General Description This Power MOSFET is produced using Semi Well’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for Battery protection circuit, Load switch and other power management application. 8-SOIC D1 D2 D2 D1 S1 G S 2 G1 2 Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TA = 25°C) Drain Current Pulsed Gate to Source Voltage Total Power Dissipation Single Operation (TA=25°C) Total Power Dissipation Single Operation (TA=70°C) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 1) Parameter Value 20 6.5 30 Units V A A V W W °C °C ±12 2.0 1.28 - 55 ~ 150 300 Thermal Characteristics...