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TM
WPM2341
P-Channel Enhancement Mode Mosfet FEATURES
• Higher Efficiency Extending Battery Life • Miniature SOT23-3 Surface Mount Package • Super high density cell design for extremely low RDS (ON)
APPLICATIONS
• DC/DC Converter • Load Switch • Battery Powered System • LCD Display inverter • Power Management in Portable, Battery Powered Products
SOT23-3 PACKAGE
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current (TJ = 150 °C)
a
Symbol VDS VGS
5s -20
Steady State
Unit
V ±8 -4.3 ID TA=80°C Pulsed Drain Current Continuous Source Current (Diode Conduction)
a
-3.5 -2.5 A -20
-3.2 IDM IS -1.7 1.25 PD 0.7 TJ, Tstg - 55 to 150
-1 0.75 W 0.
WPM2341 Datasheet
