Click to expand full text
MMBD202CCW
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Application • Ultra high speed switching
3
1
2
Marking Code: PH
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (t = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VRM VR IO IFM IFSM Ptot Tj Ts
Value 80 80 100 300 4 200 150 - 55 to + 150
Unit V V mA mA A mW
O
C C
O
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Total Capacitance at VR = 6 V, f = 1 MHz Reverse Recovery Time at VR = 6 V, IF = 5 mA, RL = 50 Ω
Symbol VF IR CT trr
Max. 1.2 0.1 3.5 4
Unit V µA pF ns
www.DataSheet4U.com
SEMTECH ELECTRONICS LTD.
MMBD202CCW Datasheet
